JPH0312784B2 - - Google Patents

Info

Publication number
JPH0312784B2
JPH0312784B2 JP58195400A JP19540083A JPH0312784B2 JP H0312784 B2 JPH0312784 B2 JP H0312784B2 JP 58195400 A JP58195400 A JP 58195400A JP 19540083 A JP19540083 A JP 19540083A JP H0312784 B2 JPH0312784 B2 JP H0312784B2
Authority
JP
Japan
Prior art keywords
voltage
integrated circuit
effect transistor
field effect
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58195400A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59107559A (ja
Inventor
Sain Pyuaa Deepuraaji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS59107559A publication Critical patent/JPS59107559A/ja
Publication of JPH0312784B2 publication Critical patent/JPH0312784B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP58195400A 1982-10-20 1983-10-20 集積回路 Granted JPS59107559A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43558682A 1982-10-20 1982-10-20
US435586 1995-05-05

Publications (2)

Publication Number Publication Date
JPS59107559A JPS59107559A (ja) 1984-06-21
JPH0312784B2 true JPH0312784B2 (en]) 1991-02-21

Family

ID=23728983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58195400A Granted JPS59107559A (ja) 1982-10-20 1983-10-20 集積回路

Country Status (3)

Country Link
EP (1) EP0106417B1 (en])
JP (1) JPS59107559A (en])
DE (1) DE3378807D1 (en])

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0161983B1 (en) * 1984-05-03 1992-07-01 Digital Equipment Corporation Input protection arrangement for vlsi integrated circuit devices
JPS60246665A (ja) * 1984-05-22 1985-12-06 Nec Corp 入力保護装置
KR950007572B1 (ko) * 1992-03-31 1995-07-12 삼성전자주식회사 Esd 보호장치
EP0623958B1 (de) * 1993-05-04 1998-04-01 Siemens Aktiengesellschaft Integrierte Halbleiterschaltung mit einem Schutzmittel
JP3283736B2 (ja) * 1995-09-30 2002-05-20 日本電気株式会社 半導体集積回路装置
CN108269858B (zh) * 2017-01-04 2021-07-16 深圳尚阳通科技有限公司 一种超级结器件、芯片及其制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6048106B2 (ja) * 1979-12-24 1985-10-25 富士通株式会社 半導体集積回路
US4342045A (en) * 1980-04-28 1982-07-27 Advanced Micro Devices, Inc. Input protection device for integrated circuits
JPS5780774A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device

Also Published As

Publication number Publication date
EP0106417A2 (en) 1984-04-25
EP0106417A3 (en) 1985-10-30
EP0106417B1 (en) 1988-12-28
DE3378807D1 (en) 1989-02-02
JPS59107559A (ja) 1984-06-21

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